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BSP170PH6327XTSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
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Inventory: 136037
Minimum: 1
Total Price: USD $0.82
Unit Price: USD $0.81795
≥1 USD $0.81795
≥10 USD $0.671318
≥100 USD $0.65037
≥500 USD $0.629423
≥1000 USD $0.608475
≥3000 USD $0.545633

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2007
Series SIPMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 300m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 28 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 92 ns
Continuous Drain Current (ID) -1.9A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -60V
Drain-source On Resistance-Max 0.3Ohm
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 7.6A
Avalanche Energy Rating (Eas) 70 mJ

Dimensions

Height 1.8mm
Length 6.5mm
Width 3.5mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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