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RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL
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Inventory: 2856
Minimum: 1
Total Price: USD $0.8
Unit Price: USD $0.80388
≥1 USD $0.80388
≥10 USD $0.700392
≥100 USD $0.485008
≥500 USD $0.405285
≥1000 USD $0.344929

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON

Dimensions

Height 2.39mm
Length 6.73mm
Width 6.22mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2009
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 125mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.11W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 9.25W
Case Connection DRAIN
Turn On Delay Time 2.6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 637pF @ 30V
Current - Continuous Drain (Id) @ 25°C 4.4A Ta
Gate Charge (Qg) (Max) @ Vgs 17.7nC @ 10V
Rise Time 3.4 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11.3 ns
Turn-Off Delay Time 26.2 ns
Continuous Drain Current (ID) 6.6A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.4A
Drain to Source Breakdown Voltage -60V
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