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TN5325K1-G

Microchip Technology
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Mosfet; N-channel Enhancement-mode; 250V; 7.0 OHM3 SOT-23T/R
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Inventory: 13250
Minimum: 1
Total Price: USD $0.63
Unit Price: USD $0.62832
≥1 USD $0.62832
≥10 USD $0.51744
≥100 USD $0.48048

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON

Dimensions

Height 950μm
Length 2.9mm
Width 1.3mm

Technical

Operating Temperature -55°C~150°C TA
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 360mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 25V
Current - Continuous Drain (Id) @ 25°C 150mA Ta
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 150mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 7Ohm
Drain to Source Breakdown Voltage 250V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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