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RoHS
RoHS RoHS compliant
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 0.9A TO92-3
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Inventory: 2963
Minimum: 1
Total Price: USD $1.48
Unit Price: USD $1.4784
≥1 USD $1.4784
≥10 USD $1.206744
≥100 USD $0.938322
≥500 USD $0.79536
≥1000 USD $0.647909
≥3000 USD $0.609932

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 500mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 900mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 850mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 850mW
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 500m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 900mA Ta
Rise Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 900mA
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.9A
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 150°C

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Manufacturer Package Identifier E-Line

Dimensions

Height 6.51mm
Length 4.77mm
Width 2.41mm
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