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IRL3705NPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 89A TO-220AB
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Inventory: 936
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.150151
≥1 USD $0.150151
≥10 USD $0.145734
≥100 USD $0.141318
≥500 USD $0.135798

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1997
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 12mOhm
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 89A
Lead Pitch 2.54mm
Number of Elements 1
Power Dissipation-Max 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 130W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 46A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 89A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 5V
Rise Time 140 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 78 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 89A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 77A
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 140 ns
Nominal Vgs 2 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

Dimensions

Height 8.77mm
Length 10.5156mm
Width 4.69mm

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