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SUP70101EL-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 100V 120A TO220AB
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Inventory: 1513
Minimum: 1
Total Price: USD $9.02
Unit Price: USD $9.02139
≥1 USD $9.02139
≥10 USD $7.402448
≥100 USD $7.171028
≥500 USD $6.939608
≥1000 USD $6.708188

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mounting Type Through Hole
Package / Case TO-220-3

Dimensions

Height 19.31mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Channels 1
Power Dissipation-Max 375W Tc
Power Dissipation 375W
Turn On Delay Time 20 ns
FET Type P-Channel
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) -120A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 8.1mOhm

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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