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CSD18535KTTT

Texas Instruments
RoHS
RoHS RoHS compliant
Package TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 200A D2PAK
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Inventory: 897
Minimum: 1
Total Price: USD $3.76
Unit Price: USD $3.76068
≥1 USD $3.76068
≥10 USD $3.154536

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Number of Pins 3
Transistor Element Material SILICON

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Dimensions

Height 4.83mm
Length 10.18mm
Width 8.41mm
Thickness 4.44mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD18535
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6620pF @ 30V
Current - Continuous Drain (Id) @ 25°C 200A Ta 279A Tc
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 279A
Threshold Voltage 1.9V
Drain Current-Max (Abs) (ID) 200A
Drain-source On Resistance-Max 0.0029Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 616 mJ

Alternative Model

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