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TK9J90E,S1E
Toshiba Semiconductor and StorageRoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN
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Inventory: 3459
Minimum: 1
Total Price: USD $1.18
Unit Price: USD $1.177378
≥1 USD $1.177378
≥10 USD $1.142749
≥100 USD $1.10812
≥500 USD $1.064834
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Technical
Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Turn On Delay Time 80 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 900μA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 900V
Input Capacitance 2nF
Drain to Source Resistance 1Ohm
Rds On Max 1.3 Ω
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Weight 6.961991g
Compliance
RoHS Status RoHS Compliant
Alternative Model
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