Operating Temperature -55°C~175°C TJ
Packaging Tube
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD19505
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 31 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 100A, 6V
Vgs(th) (Max) @ Id 3.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7820pF @ 40V
Current - Continuous Drain (Id) @ 25°C 150A Ta
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
Rise Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 150A
Threshold Voltage 2.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 400A