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STP13N80K5
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 12A TO220
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Inventory: 995
Minimum: 1
Total Price: USD $0.72
Unit Price: USD $0.723286
≥1 USD $0.723286
≥10 USD $0.702012
≥100 USD $0.680739
≥500 USD $0.654148
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH5?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STP13N
Number of Elements 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 12A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.45Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 48A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Dimensions
Height 15.75mm
Length 10.4mm
Width 4.6mm
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