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IPD33CN10NGATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 27A 3-Pin(2+Tab) TO-252
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Inventory: 34018
Minimum: 1
Total Price: USD $0.41
Unit Price: USD $0.40615
≥1 USD $0.40615
≥10 USD $0.394205
≥100 USD $0.382259
≥500 USD $0.367327

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 58W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 58W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 33m Ω @ 27A, 10V
Vgs(th) (Max) @ Id 4V @ 29μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 50V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 21 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 27A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Pulsed Drain Current-Max (IDM) 108A
Avalanche Energy Rating (Eas) 47 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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