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ZVP2110GTA

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 100V 0.31A SOT223
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Inventory: 2107
Minimum: 1
Total Price: USD $0.33
Unit Price: USD $0.326584
≥1 USD $0.326584
≥10 USD $0.316979
≥100 USD $0.307374
≥500 USD $0.295367

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON

Dimensions

Height 1.65mm
Length 6.7mm
Width 3.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 8Ohm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -350mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8 Ω @ 375mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 310mA Ta
Rise Time 15 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 310mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 3A

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