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SI8409DB-T1-E1

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 4-XFBGA, CSPBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 4.6A 2X2 4-MFP
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Inventory: 1659
Minimum: 1
Total Price: USD $0.55
Unit Price: USD $0.549355
≥1 USD $0.549355
≥10 USD $0.533198
≥100 USD $0.51704
≥500 USD $0.496843

Technical Details

Supply Chain

Factory Lead Time 33 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA, CSPBGA
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 46MOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.47W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.47W
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 46m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.6A Ta
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 35 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) -6.3A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -30V

Dimensions

Height 360μm
Length 1.6mm
Width 1.6mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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