Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Series U-MOSVIII-H
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.6W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 59m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 75V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Rise Time 5.2ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.059Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 35A
Avalanche Energy Rating (Eas) 36 mJ