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FDT86106LZ

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 T/R
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Inventory: 14092
Minimum: 1
Total Price: USD $1.26
Unit Price: USD $1.25664
≥1 USD $1.25664
≥10 USD $1.028412
≥100 USD $0.79963
≥500 USD $0.677754
≥1000 USD $0.552109
≥3000 USD $0.519741

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 11 hours ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Case Connection DRAIN
Turn On Delay Time 3.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 108m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Rise Time 1.3 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1.5 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 3.2A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Nominal Vgs 1.5 V
Feedback Cap-Max (Crss) 5 pF

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Dimensions

Height 1.7mm
Length 3.7mm
Width 6.7mm

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 250.2mg
Transistor Element Material SILICON

Alternative Model

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