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CSD17308Q3T

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 50A
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Inventory: 3341
Minimum: 1
Total Price: USD $0.3
Unit Price: USD $0.304889
≥1 USD $0.304889
≥10 USD $0.287627
≥100 USD $0.271352
≥500 USD $0.25599
≥1000 USD $0.2415
≥3000 USD $0.227829

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Dimensions

Length 3.3mm
Width 3.3mm
Thickness 1mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Reach Compliance Code not_compliant
Base Part Number CSD17308
Number of Elements 1
Power Dissipation-Max 2.7W Ta 28W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.3m Ω @ 10A, 8V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs 5.1nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Continuous Drain Current (ID) 44A
Threshold Voltage 1.3V
Drain Current-Max (Abs) (ID) 14A
Drain-source On Resistance-Max 0.0165Ohm
Pulsed Drain Current-Max (IDM) 167A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 65 mJ
Feedback Cap-Max (Crss) 35 pF

Alternative Model

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