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IPD50P03P4L11ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 50A TO252-3
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Inventory: 2402
Minimum: 1
Total Price: USD $0.59
Unit Price: USD $0.587303
≥1 USD $0.587303
≥10 USD $0.57003
≥100 USD $0.552756
≥500 USD $0.531164

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series OptiMOS?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 58W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 85μA
Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +5V, -16V
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.0105Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 100 mJ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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