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SI7143DP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V 35A P-CH MOSFET
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Inventory: 1007
Minimum: 1
Total Price: USD $0.51
Unit Price: USD $0.506687
≥1 USD $0.506687
≥10 USD $0.491784
≥100 USD $0.476882
≥500 USD $0.458254

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Technical

Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 10MOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 4.2W Ta 35.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.2W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 16.1A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2230pF @ 15V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 16.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 35A
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 60A
Nominal Vgs -1.2 V

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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