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CSD17573Q5B

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 100A 8VSON
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Inventory: 3481
Minimum: 1
Total Price: USD $0.66
Unit Price: USD $0.662802
≥1 USD $0.662802
≥10 USD $0.625286
≥100 USD $0.58989
≥500 USD $0.5565
≥1000 USD $0.525
≥3000 USD $0.495285

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)

Physical

Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17573
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.2W Ta 195W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 64nC @ 4.5V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 43A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 400A
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 390 pF

Dimensions

Height 1.05mm
Length 5mm
Width 6mm
Thickness 950μm
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