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SIR800DP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 50A PPAK SO-8
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Inventory: 984
Minimum: 1
Total Price: USD $0.23
Unit Price: USD $0.231207
≥1 USD $0.231207
≥10 USD $0.224407
≥100 USD $0.217606
≥500 USD $0.209106

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.2W Ta 69W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.2W
Case Connection DRAIN
Turn On Delay Time 27 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5125pF @ 10V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 133nC @ 10V
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 35.4A
Drain-source On Resistance-Max 0.0023Ohm
Drain to Source Breakdown Voltage 20V
Avalanche Energy Rating (Eas) 45 mJ
Nominal Vgs 600 mV

Alternative Model

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