Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 135MOhm
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Current Rating -12A
Number of Elements 1
Power Dissipation-Max 2.5W Ta 44W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 135m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 100 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) -12A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 48A