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STB7NK80ZT4

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 5.2A D2PAK
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Inventory: 1012
Minimum: 1
Total Price: USD $0.63
Unit Price: USD $0.626265
≥1 USD $0.626265
≥10 USD $0.607845
≥100 USD $0.589426
≥500 USD $0.566401

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 1.8Ohm
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 5.2A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STB7N
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.8 Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1138pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.2A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 5.2A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 20.8A

Dimensions

Height 4.6mm
Length 10.75mm
Width 10.4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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