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STD2HNK60Z-1

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 2A IPAK
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Inventory: 984
Minimum: 1
Total Price: USD $0.21
Unit Price: USD $0.205459
≥1 USD $0.205459
≥10 USD $0.199416
≥100 USD $0.193373
≥500 USD $0.185819

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON

Dimensions

Height 6.35mm
Length 19.05mm
Width 6.35mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 4.8Ohm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD2HNK
Pin Count 3
Number of Elements 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.8 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 2A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 8A
Nominal Vgs 3.75 V

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