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DMN21D2UFB-7B

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 3-UFDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 0.76A 3DFN
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Inventory: 53436
Minimum: 1
Total Price: USD $0.35
Unit Price: USD $0.35112
≥1 USD $0.35112
≥10 USD $0.246708
≥100 USD $0.124463
≥500 USD $0.110326
≥1000 USD $0.085859
≥3000 USD $0.07685

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 480μm
Length 1.08mm
Width 675μm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 380mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 3.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 990m Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 27.6pF @ 16V
Current - Continuous Drain (Id) @ 25°C 760mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.93nC @ 10V
Rise Time 4.2 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 9.8 ns
Turn-Off Delay Time 19.6 ns
Continuous Drain Current (ID) 760mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.76A
Drain-source On Resistance-Max 0.99Ohm
DS Breakdown Voltage-Min 20V

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