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DMN2300UFB4-7B

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 3-XFDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 1.3A 3DFN
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Inventory: 9212
Minimum: 1
Total Price: USD $0.06
Unit Price: USD $0.059588
≥1 USD $0.059588
≥10 USD $0.047611
≥100 USD $0.041622
≥500 USD $0.03713
≥1000 USD $0.033537
≥10000 USD $0.116708

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 175mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Case Connection DRAIN
Turn On Delay Time 3.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 300mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 64.3pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.3A Ta
Gate Charge (Qg) (Max) @ Vgs 1.6nC @ 4.5V
Rise Time 2.8 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 1.3A
Threshold Voltage 950mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C

Dimensions

Height 400μm
Length 1.05mm
Width 650μm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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