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SSM3J114TU(T5L,T)

Toshiba Semiconductor and Storage
RoHS
/
Package 3-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 1.8A UFM
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Supplier Device Package UFM

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 500mW Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 149mOhm @ 600mA, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 331pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
Vgs (Max) ±8V
Continuous Drain Current (ID) 1.8A
Input Capacitance 331pF
Rds On Max 149 mΩ

Compliance

RoHS Status RoHS Compliant

Alternative Model

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