Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 4.9MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 36W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 36W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.9m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 13V
Current - Continuous Drain (Id) @ 25°C 17A Ta 68A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time 40 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V