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SI4894BDY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V 12V 1.4W
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Inventory: 11387
Minimum: 1
Total Price: USD $1.17
Unit Price: USD $1.17348
≥1 USD $1.17348
≥10 USD $0.957264
≥100 USD $0.744744
≥500 USD $0.63124
≥1000 USD $0.514215

Technical Details

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 11mOhm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.4W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1580pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.9A Ta
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 30V
Nominal Vgs 3 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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