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TN5335N8-G

Microchip Technology
RoHS
RoHS RoHS compliant
Package TO-243AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 350V 15Ohm
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Inventory: 1492
Minimum: 1
Total Price: USD $1.05
Unit Price: USD $1.05336
≥1 USD $1.05336
≥10 USD $0.8778
≥100 USD $0.80388

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Weight 52.786812mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230mA Tj
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 230mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 350V

Dimensions

Height 1.6mm
Length 4.6mm
Width 2.6mm

Compliance

RoHS Status ROHS3 Compliant

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