Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1998
Series QFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 7.8A
Number of Elements 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 3.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.8A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 92ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 72 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 7.8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V