Operating Temperature 150°C TJ
Packaging Tube
Series DeepGATE?, STripFET? VI
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STF10P
Number of Elements 1
Power Dissipation-Max 20W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 20W
Case Connection DRAIN
Turn On Delay Time 64 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 48V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
Rise Time 5.3ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.7 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 10A
JEDEC-95 Code TO-251
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.2A
Drain-source On Resistance-Max 0.16Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 80 mJ