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TSM4ND65CI

Taiwan Semiconductor Corporation
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack, Isolated Tab
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description 650V 4A SINGLE N-CHANNEL POWER M
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Inventory: 1987
Minimum: 1
Total Price: USD $2.38
Unit Price: USD $2.38392
≥1 USD $2.38392
≥10 USD $1.91268
≥100 USD $1.573757
≥500 USD $1.33165
≥1000 USD $1.129895
≥3000 USD $1.073401

Technical Details

Supply Chain

Factory Lead Time 28 Weeks

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 41.6W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.6 Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 596pF @ 50V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 16.8nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V

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