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TPWR6003PL,L1Q

Toshiba Semiconductor and Storage
RoHS
/
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description PB-F POWER MOSFET TRANSISTOR DSO
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Inventory: 15399
Minimum: 1
Total Price: USD $2.64
Unit Price: USD $2.64264
≥1 USD $2.64264
≥10 USD $2.216676
≥100 USD $1.79293
≥500 USD $1.593715
≥1000 USD $1.364619
≥3000 USD $1.284933

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mounting Type Surface Mount
Package / Case 8-PowerWDFN

Technical

Operating Temperature 175°C
Packaging Tape & Reel (TR)
Series U-MOSIX-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 960mW Ta 170W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600μ Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 150A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V

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