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IRFU9020PBF

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 50V 9.9A I-PAK
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Inventory: 8413
Minimum: 1
Total Price: USD $0.13
Unit Price: USD $0.132724
≥1 USD $0.132724
≥10 USD $0.128821
≥100 USD $0.124917
≥500 USD $0.120037

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 329.988449mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 42W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 8.2 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.9A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 67 ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 9.9A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.28Ohm
Drain to Source Breakdown Voltage -50V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 250 mJ
Nominal Vgs -4 V

Dimensions

Height 6.22mm
Length 6.73mm
Width 2.39mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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