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TK090N65Z,S1F

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description PB-F POWER MOSFET TRANSISTOR TO-
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Inventory: 143
Minimum: 1
Total Price: USD $5.46
Unit Price: USD $5.46084
≥1 USD $5.46084
≥10 USD $4.329864
≥100 USD $3.711404
≥500 USD $3.298985
≥1000 USD $2.82476
≥3000 USD $2.659808

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Technical

Operating Temperature 150°C
Packaging Tube
Series DTMOSVI
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 230W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 90m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1.27mA
Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 300V
Current - Continuous Drain (Id) @ 25°C 30A Ta
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V

Physical

Mounting Type Through Hole
Package / Case TO-247-3

Compliance

RoHS Status RoHS Compliant

Alternative Model

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