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CSD17301Q5A

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V N Channel NexFET Pwr MOSFET
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Inventory: 13501
Minimum: 1
Total Price: USD $1.03
Unit Price: USD $1.02564
≥1 USD $1.02564
≥10 USD $0.853776
≥100 USD $0.679325
≥500 USD $0.613314

Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17301
Pin Count 8
Number of Elements 1
Power Dissipation-Max 3.2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 10.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 25A, 8V
Vgs(th) (Max) @ Id 1.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3480pF @ 15V
Current - Continuous Drain (Id) @ 25°C 28A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Rise Time 16.2ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 10.5 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.0037Ohm
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.1 V

Dimensions

Height 1.1mm
Length 4.9mm
Width 6mm
Thickness 1mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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