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CSD18533Q5AT

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 100A 8SON
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Inventory: 912
Minimum: 1
Total Price: USD $1.44
Unit Price: USD $1.44144
≥1 USD $1.44144
≥10 USD $1.193808
≥100 USD $0.949964

Technical Details

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Dimensions

Length 4.9mm
Width 6mm
Thickness 1mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Resistance 4.7mOhm
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD18533
Number of Elements 1
Power Dissipation-Max 3.2W Ta 116W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.9m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2750pF @ 30V
Current - Continuous Drain (Id) @ 25°C 17A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 5.5ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 17A
Pulsed Drain Current-Max (IDM) 267A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 140 mJ
Feedback Cap-Max (Crss) 9 pF

Alternative Model

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