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IPB200N15N3GATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description On a Reel of 1000, N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK Infineon IPB200N15N3GATMA1
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Pricing & Ordering
Inventory: 1200
Minimum: 1
Total Price: USD $2.18
Unit Price: USD $2.177543
≥1 USD $2.177543
≥10 USD $1.78752
≥100 USD $1.73166
≥500 USD $1.6758
≥1000 USD $1.61994

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 75V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 150V
Avalanche Energy Rating (Eas) 170 mJ

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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