Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2.4MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4610pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 134nC @ 10V
Rise Time 39 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 90A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 760A
Nominal Vgs 3 V