Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 580MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -150V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating -13A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 295m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Rise Time 36 ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) -13A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -150V
Pulsed Drain Current-Max (IDM) 44A
Dual Supply Voltage -150V
Nominal Vgs -4 V