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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 11A TO-220
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Inventory: 1691
Minimum: 1
Total Price: USD $2.91
Unit Price: USD $2.9106
≥1 USD $2.9106
≥10 USD $2.307598
≥100 USD $1.978007
≥500 USD $1.758224
≥1000 USD $1.505483
≥3000 USD $1.417574

Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON

Dimensions

Height 9.4mm
Length 10.1mm
Width 4.7mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series SuperFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 380MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 11A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Quiescent Current 100μA
Turn On Delay Time 34 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 98 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 119 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Dual Supply Voltage 600V
Nominal Vgs 5 V
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