Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 80V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 160A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Turn On Delay Time 85 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Rise Time 970 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 410 ns
Turn-Off Delay Time 260 ns
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 640A