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SCT3080ARC14

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-247-4
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description 650V NCH SIC TRENCH MOSFET IN 4P
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Inventory: 367
Minimum: 1
Total Price: USD $17.96
Unit Price: USD $17.96256
≥1 USD $17.96256
≥10 USD $14.541912
≥100 USD $13.686519
≥500 USD $12.403416

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mounting Type Through Hole
Package / Case TO-247-4
Surface Mount NO
Transistor Element Material SILICON CARBIDE

Technical

Operating Temperature 175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 134W
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 10A, 18V
Vgs(th) (Max) @ Id 5.6V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 571pF @ 500V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 18V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs (Max) +22V, -4V
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.104Ohm
Pulsed Drain Current-Max (IDM) 75A
DS Breakdown Voltage-Min 650V

Compliance

RoHS Status ROHS3 Compliant
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