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DMP56D0UFB-7B

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 3-UFDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 50V 200MA 3DFN
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Inventory: 49658
Minimum: 1
Total Price: USD $0.24
Unit Price: USD $0.24024
≥1 USD $0.24024
≥10 USD $0.182952
≥100 USD $0.109864
≥500 USD $0.101677
≥1000 USD $0.07161

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Configuration Single
Power Dissipation-Max 425mW Ta
Turn On Delay Time 4.46 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 6 Ω @ 100mA, 4V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50.54pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.58nC @ 4V
Rise Time 6.63ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4V
Vgs (Max) ±8V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 21.9 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.2A

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