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SIHP30N60E-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
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Inventory: 4074
Minimum: 1
Total Price: USD $1.74
Unit Price: USD $1.743481
≥1 USD $1.743481
≥10 USD $1.692202
≥100 USD $1.640923
≥500 USD $1.576825

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series E
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 125mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Power Dissipation 250W
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 100V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 32ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 63 ns
Continuous Drain Current (ID) 29A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 2.6nF
Drain to Source Resistance 125mOhm
Rds On Max 125 mΩ

Dimensions

Height 15.49mm
Length 10.51mm
Width 4.65mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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