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SIHB24N65E-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 24A D2PAK
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Inventory: 1957
Minimum: 1
Total Price: USD $2.17
Unit Price: USD $2.172637
≥1 USD $2.172637
≥10 USD $2.108736
≥100 USD $2.044835
≥500 USD $1.964958

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g

Dimensions

Height 4.83mm
Length 10.67mm
Width 9.65mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 145mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Power Dissipation 250W
Turn On Delay Time 24 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2740pF @ 100V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 122nC @ 10V
Rise Time 84ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 69 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 650V
Input Capacitance 2.74nF
Drain to Source Resistance 145mOhm
Rds On Max 145 mΩ

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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