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SIHG23N60E-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 650V 158mOhms@10V 23A N-Channel
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Inventory: 1692
Minimum: 1
Total Price: USD $33.59
Unit Price: USD $33.58782
≥1 USD $33.58782
≥10 USD $27.55893
≥100 USD $26.698088
≥500 USD $25.836248
≥1000 USD $24.975405

Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Weight 38.000013g
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TA
Packaging Tube
Published 2017
Series E
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 158mOhm
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 227W Tc
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 158m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2418pF @ 100V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 23A
JEDEC-95 Code TO-247AC
Pulsed Drain Current-Max (IDM) 63A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 353 mJ

Alternative Model

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