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RoHS
RoHS RoHS compliant
Package TO-263
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description GENESIC SEMICONDUCTOR GA10JT12-263SIC JUNCTION TRANSISTOR, 1.2KV, 10A, TO-263
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Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Technical

Operating Temperature 175°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Technology SiC (Silicon Carbide Junction Transistor)
Power Dissipation-Max 170W Tc
Rds On (Max) @ Id, Vgs 120m Ω @ 10A
Input Capacitance (Ciss) (Max) @ Vds 1403pF @ 800V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Drain to Source Voltage (Vdss) 1200V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 25A

Compliance

REACH SVHC No SVHC
RoHS Status RoHS Compliant

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263
Number of Pins 3
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