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SSM6G18NU,LF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 6-WDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description SMALL SIGNAL MOSFET P-CH + SBD V
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Inventory: 961
Minimum: 1
Total Price: USD $0.43
Unit Price: USD $0.42504
≥1 USD $0.42504
≥10 USD $0.302148
≥100 USD $0.152275
≥500 USD $0.134978
≥1000 USD $0.10504

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 1W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 112m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
FET Feature Schottky Diode (Isolated)

Compliance

RoHS Status RoHS Compliant

Alternative Model

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