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IRFB9N65APBF

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 8.5A TO-220AB
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Inventory: 963
Minimum: 1
Total Price: USD $0.29
Unit Price: USD $0.294731
≥1 USD $0.294731
≥10 USD $0.286063
≥100 USD $0.277394
≥500 USD $0.266558

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Dimensions

Height 9.01mm
Length 10.41mm
Width 4.7mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 930mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 167W Tc
Element Configuration Single
Power Dissipation 167W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 930mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1417pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.5A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 8.5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Input Capacitance 1.417nF
Recovery Time 739 ns
Drain to Source Resistance 930mOhm
Rds On Max 930 mΩ
Nominal Vgs 4 V

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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